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03/18/10 irfh5110pbf hexfet power mosfet notes through are on page 8 features and benefits www.irf.com 1 features benefits pqfn 5x6 mm applications ? secondary side synchronous rectification ? inverters for dc motors ? dc-dc brick applications note form quantit y IRFH5110TRPBF pqfn 5mm x 6mm ta p e and reel 4000 irfh5110tr2pbf pqfn 5mm x 6mm ta p e and reel 400 orderable part number package type standard pac k absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 11 40 252 20 100 9.0 63 -55 to + 150 3.6 0.029 114 v ds 100 v r ds(on) max (@v gs = 10v) 12.4 m ? q g (typical) 48 nc r g (typical) 1.5 ? i d (@t c(bottom) = 25c) 63 a low rdson (< 12.4 m ? ) lower conduction losses low thermal resistance to pcb (< 1.1c/w) increased power density 100% r g tested increased reliability low profile (<0.9 mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existin g surface mount techniques easier manufacturin g rohs compliant containin g no lead, no bromide and no halo g en environmentally friendlier msl1, industrial qualification increased reliability
2 www.irf.com thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 1.1 r jc (top) junction-to-case ??? 15 c/w r ja junction-to-ambient ??? 35 r ja (<10s) junction-to-ambient ??? 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 100 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.11 ??? v/c r ds(on) static drain-to-source on-resistance ??? 10.3 12.4 m ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v ? v gs(th) gate threshold voltage coefficient ??? -8.8 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 286 ??? ??? s q g total gate charge ??? 48 72 q gs1 pre-vth gate-to-source charge ??? 8.5 ??? q gs2 post-vth gate-to-source charge ??? 3.3 ??? q gd gate-to-drain charge ??? 15 ??? q godr gate charge overdrive ??? 21 ??? q sw switch char g e (q gs2 + q gd ) ??? 18 ??? q oss output charge ??? 14 ??? nc r g gate resistance ??? 1.5 ??? ? t d(on) turn-on delay time ??? 7.8 ??? t r rise time ??? 9.6 ??? t d(off) turn-off delay time ??? 22 ??? t f fall time ??? 6.4 ??? c iss input capacitance ??? 3152 ??? c oss output capacitance ??? 324 ??? c rss reverse transfer capacitance ??? 121 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener g y mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 34 51 ns q rr reverse recovery charge ??? 237 356 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 100a v gs = 10v typ. v ds = 100v, v gs = 0v v ds = 16v, v gs = 0v v dd = 50v, v gs = 10v ??? r g =1.3 ? v ds = 25v, i d = 37a v ds = 100v, v gs = 0v, t j = 125c a i d = 37a i d = 37a v gs = 0v v ds = 25v t j = 25c, i f = 37a, v dd = 50v di/dt = 500a/s t j = 25c, i s = 37a, v gs = 0v showing the integral reverse p-n junction diode. conditions max. 93 37 ? = 1.0mhz conditions v gs = 0v, i d = 250ua reference to 25c, i d = 1.0ma v gs = 10v, i d = 37a ??? ??? 252 ??? ??? 63 mosfet symbol na ns a pf nc v ds = 50v ??? v gs = 20v v gs = -20v d s g
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.00v 5.00v 4.50v 4.25v 4.00v bottom 3.75v 60s pulse width tj = 25c 3.75v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.75v 60s pulse width tj = 150c vgs top 15v 10v 7.00v 5.00v 4.50v 4.25v 4.00v bottom 3.75v 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 37a v gs = 10v 0 10203040506070 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v vds= 20v i d = 37a 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss
4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a id = 1.0ma id = 100a i 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 30 35 40 45 50 55 60 65 i d , d r a i n c u r r e n t ( a ) 0.10 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec
www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.1a 10.1a bottom 37a 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 10 20 30 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 37a t j = 25c t j = 125c
6 www.irf.com fig 16.
for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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www.irf.com 7 pqfn 5x6 outline "b" package details

http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "b" part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code)
8 www.irf.com qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.136mh, r g = 50 ? , i as = 37a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/2010 data and specifications subject to change without notice. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) pqfn 5x6 outline "b" tape and reel

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